| 图片 |
标 题 |
更新时间 |
 |
日立ABB IGBT模块5SNA 0750G650300
ABB IGBT模块5SNA0750G650300ABB HiPakIGBT Module5SNA 0750G650300VCE = 6500 VIC = 750 A低损耗、坚固耐用的SPT芯片组平滑切
|
2025-06-18 |
 |
日立ABB GTO二极管5SGA 15F2502
Asymmetric Gate turn-off Thyristor5SGA 15F2502VDRM =2500 VITGQM =1500 AITSM= 10×103 AVT0=1.45 VrT=0.90 mWVDclin
|
2025-06-18 |
 |
日立ABB GTO二极管5SGA 30J4502
Asymmetric Gate turn-offThyristor5SGA 30J4502VDRM = 4500 VITGQM = 3000 AITSM = 24×103 AVT0 = 2.2 VrT = 0.6 m
|
2025-06-18 |
 |
日立ABB GTO二极管5SGF 30J4502
Gate turn-off Thyristor5SGF 30J4502PRELIMINARYVDRM = 4500 VITGQM = 3000 AITSM= 24 kAVT0= 1.80 VrT= 0.70 mΩVDClin
|
2025-06-18 |
 |
日立ABB PCT二极管5STP 07D1800
Phase Control Thyristor5STP 07D1800VDRM=1800 VIT(AV)M=760 AIT(RMS)=1190 AITSM= 9.0103AVT0=0.927 VrT=0.448 m 专利浮动硅
|
2025-06-18 |
 |
日立ABB PCT二极管5STP 18F1810
5STP 18F1810Phase control thyristorVDRM, VRRM= 1800 VITAVm= 1780 AITSM= 21000 AVT0= 0.923 VrT= 0.188 mΩ 专利浮动硅
|
2025-06-18 |
 |
日立ABB PCT二极管5STP 27H1800
Phase Control Thyristor5STP 27H1800VDRM=1800 VIT(AV)M=2940 AIT(RMS)=4620 AITSM= 50.5103AVT0=0.912 VrT=0.096 mW 专利浮动
|
2025-06-18 |
 |
日立ABB PCT二极管5STP 42L1800
Phase Control Thyristor5STP 42L1800VDRM=1800 VIT(AV)M=4310 AIT(RMS)=6770 AITSM= 64.0103AVT0=0.81 VrT=0.08 mW 专利浮动硅
|
2025-06-18 |
产品分类